PART |
Description |
Maker |
CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
KM718V847 |
(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM
|
Samsung Semiconductor
|
GS881Z18BD-133 GS881Z18BD-133I GS881Z18BD-150 GS88 |
133MHz 8.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 150MHz 7.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 166MHz 7ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 200MHz 6.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 225MHz 6ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 250MHz 5.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
IDT71V433 IDT71V433S11PF IDT71V433S11PFI IDT71V433 |
From old datasheet system 32K x 32 3.3V Synchronous SRAM Flow-Through Outputs 32K X 32 Flow-Through Ouputs SRAM
|
Integrated Device Technology IDT
|
K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36 128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36 256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119 SENSOR DIFF VACUUM GAGE 1PSI SENSOR ABSOLUTE 0-15PSIA 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
K7B401825B K7B403625B |
128Kx36 & 256Kx18 Synchronous SRAM
|
Samsung semiconductor
|
CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的(256 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
K7A403609B06 |
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung semiconductor
|
IC61SF12836 IC61SF12832 IC61SF12832-7.5B IC61SF128 |
SYNCHRONOUS STATIC RAM, Flow Through 128K x 32 Flow Through SyncBurst SRAM
|
Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc]
|
KM718FV4021H-5 KM718FV4021H-6 KM718FV4021H-7 KM736 |
(KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|